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Fairchild Semiconductor Electronic Components Datasheet

FDPF7N50 Datasheet

N-Channel MOSFET

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FDPF7N50 pdf
FDP7N50/FDPF7N50
500V N-Channel MOSFET
Features
• 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
• Low gate charge ( typical 12.8 nC)
• Low Crss ( typical 9 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
March 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
Absolute Maximum Ratings
GD S
TO-220F
FDPF Series
www.DataSheet4U.com
G
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FDP7N50 FDPF7N50
500
7 7*
4.2 4.2 *
28 28 *
±30
270
7
8.9
4.5
89 39
0.71 0.31
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP7N50
1.4
0.5
62.5
FDPF7N50
3.2
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDP7N50/FDPF7N50 REV. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDPF7N50 Datasheet

N-Channel MOSFET

No Preview Available !

FDPF7N50 pdf
Package Marking and Ordering Information
Device Marking
FDP7N50
FDPF7N50
Device
FDP7N50
FDPF7N50
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.5A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 3.5A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 7A
RG = 25Ω
VDS = 400V, ID = 7A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 7A
dIF/dt =100A/μs
(Note 4)
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
0.76
2.5
720
95
9
6
55
25
35
12.8
3.7
5.8
--
--
--
275
0.04
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0 V
0.9 Ω
-- S
940 pF
190 pF
13.5 pF
20
120
60
80
16.6
--
--
ns
ns
ns
ns
nC
nC
nC
7A
28 A
1.4 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 7A, VDD = 50V, L=10mH, RG = 25Ω, Starting TJ = 25°C
3. ISD 7A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP7N50/FDPF7N50 REV. A
2
www.fairchildsemi.com


Part Number FDPF7N50
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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