FDPF7N50F
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A
- Low gate charge ( Typ. 15nC)
- Low Crss ( Typ. 6.3pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant tm
