900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

FDPF7N50U Datasheet

N-Channel MOSFET

No Preview Available !

March 2013
FDPF7N50U
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 5 A, 1.5
Features
• RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A
• Low Gate Charge (Typ.12.8 nC)
• Low Crss (Typ. 9 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
G
DS
TO-220
Absolute Maximum Ratings
GDS
G
TO-220F
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25C)
- Derate above 25C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FDPF7N50U
500
5*
3.0 *
20 *
30
125
5
8.9
20
31.3
0.25
-55 to +150
300
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDPF7N50U
4.0
62.5
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDPF7N50U Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDPF7N50U
Device
FDPF7N50U
Package
TO-220F
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250A
ID = 250A, Referenced to 25C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250A
VGS = 10V, ID = 2.5A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 2.5A
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 5A
RG = 25
VDS = 400V, ID = 5A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 5A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 5A
dIF/dt =100A/s
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
1.2
2.5
720
95
9
6
55
25
35
12.8
3.7
5.8
--
--
--
40
0.04
Max Unit
--
--
25
250
100
-100
V
V/C
A
A
nA
nA
5.0 V
1.5
-- S
940 pF
190 pF
13.5 pF
20
120
60
80
16.6
--
--
ns
ns
ns
ns
nC
nC
nC
5A
20 A
1.6 V
-- ns
-- C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5A, VDD = 50V, L=10mH, RG = 25, Starting TJ = 25C
3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
2
www.fairchildsemi.com


Part Number FDPF7N50U
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
PDF Download

FDPF7N50U Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FDPF7N50 N-Channel MOSFET
Fairchild Semiconductor
2 FDPF7N50F N-Channel MOSFET
Fairchild Semiconductor
3 FDPF7N50U N-Channel MOSFET
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy