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FDS3692 - N-Channel MOSFET

Features

  • rDS(ON) = 50mΩ (Typ. ), VGS = 10V, ID = 4.5A.
  • Qg(tot) = 11nC (Typ. ), VGS = 10V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • Optimized efficiency at high frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82745.

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Full PDF Text Transcription

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FDS3692 April 2013 FDS3692 N-Channel PowerTrench® MOSFET 100V, 4.5A, 60mΩ Features • rDS(ON) = 50mΩ (Typ.), VGS = 10V, ID = 4.5A • Qg(tot) = 11nC (Typ.
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