900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

FDS4465_F085 Datasheet

P-Channel 1.8V Specified PowerTrench MOSFET

No Preview Available !

June 2012
FDS4465_F085
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
Power management
Load switch
Battery protection
Features
–13.5 A, –20 V.
RDS(ON) = 8.5 m@ VGS = –4.5 V
RDS(ON) = 10.5 m@ VGS = –2.5 V
RDS(ON) = 14 m@ VGS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High current and power handling capability
Qualified to AEC Q101
RoHS Compliant
DD DDDD
DD
SO-8
Pin 1 SO-8
SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4465
FDS4465_F085
13’’
©2012 Fairchild Semiconductor Corporation
FDS4465_F085 Rev. C1
1
5
6
7
8
Ratings
–20
±8
–13.5
–50
2.5
1.2
1
–55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDS4465_F085 Datasheet

P-Channel 1.8V Specified PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –13.5 A
VGS = –2.5 V, ID = –12 A
VGS = –1.8 V, ID = –10.5 A
VGS=–4.5 V, ID =–13.5A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –13.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –10V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6
VDS = –10 V,
VGS = –4.5 V
ID = –13.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
–20
–0.4
–50
–12
–0.6
3
6.7
8.0
9.8
9.0
70
8237
1497
750
20
24
300
140
86
20
11
–0.6
–1
100
–100
–1.5
8.5
10.5
14
13
36
38
480
224
120
–2.1
–1.2
V
mV/°C
µA
nA
nA
V
mV/°C
m
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105 °C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4465_F085 Rev. C1
2
www.fairchildsemi.com


Part Number FDS4465_F085
Description P-Channel 1.8V Specified PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 5 Pages
PDF Download

FDS4465_F085 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy