FDS4488 Datasheet, Fairchild Semiconductor

* 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V
* Low gate charge (9.5 nC typical)
* High performance trench technology for extre.

where low inline power loss and fast switching are required. Features
* 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V .

This N -Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low v.