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FDS4685 Datasheet 40V P-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

D D D D SO-8 Pin 1 G S S S 54 63 72 81 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Ratings –40 ±20 –8.2 –50 2.5 1.4 1.2 –55 to +150 50 125 25 Package Marking and Ordering Information Device Marking FDS4685 Device FDS4685 Reel Size 13” Tape width 12mm Units V V A W °C °C/W Quantity 2500 units ©2005 Fairchild Semiconductor Corporation FDS4685 Rev.

Overview

FDS4685 40V P-Channel PowerTrench® MOSFET June 2005 FDS4685 40V P-Channel PowerTrench®.

Key Features

  • 8.2 A,.
  • 40 V RDS(ON) = 0.027 Ω @ VGS =.
  • 10 V RDS(ON) = 0.035 Ω @ VGS =.
  • 4.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDS4685 40V P-Channel Power MOSFET ON Semiconductor

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