FDS6986AS Datasheet | Fairchild Semiconductor

Description Features The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook puters and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, Power Trench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. - Q2: Optimized to minimize conduction losses Includes Sync FET Schottky body diode 7.9A, 30V RDS(on) = 20 mΩ @ VGS = 10V RDS(on) = 28 mΩ @ VGS = 4.5V - Q1: Optimized for low switching losses Low gate charge (10 n C typical) 6.5A, 30V RDS(on) = 29 mΩ @ VGS = 10V RDS(on) = 38 mΩ @ VGS = 4.5V D2D/S21/S1D1 D1 G2 S2 G1S1/D2 SO-8 Pin 1 SO-8 G SS S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJC Thermal Resistance, Junction-to-Case (Note 1) Package Marking and Ordering Information Device...