Datasheet Details
| Part number | FDS86242 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 215.25 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet | FDS86242-FairchildSemiconductor.pdf |
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Overview: FDS86242 N-Channel PowerTrench® MOSFET August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.
| Part number | FDS86242 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 215.25 KB |
| Description | N-Channel PowerTrench MOSFET |
| Datasheet | FDS86242-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1) (Note 1a) Ratings 150 ±20 4.1 20 40 5.0 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 25 50 °C/W Device Marking FDS86242 Device FDS86242 Package SO-8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2010 Fairchild Semiconductor Corporation FDS86242 Rev.
C 1 www.fairchildsemi.com FDS86242 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperatur Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VG
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDS86242 | 150V 4.1A N-Channel MOSFET | ON Semiconductor |
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