FDS8978 - N-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS8978
Manufacturer	Fairchild Semiconductor
File Size	582.19 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDS8978-FairchildSemiconductor.pdf

FDS8978 Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. DC/DC converters D2 5 D2 6 Q2 4 G2 3 S2 SO-8 Pin 1 S2 G2 G1 S1 D1 D1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drai

Features

rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A.
rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A.
High performance trench technology for extremely low rDS(on).
Low gate charge.
High power and current handling capability.
100% Rg Tested.
RoHS Compliant D1 D1 D2 D2 General.

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Published: Jun 14, 2016 |