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FDS8978 Datasheet N-Channel PowerTrench MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Applications „ DC/DC converters D2 5 D2 6 Q2 4 G2 3 S2 SO-8 Pin 1 S2 G2 G1 S1 D1 D1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature 7 8 Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2c) Package Marking and Ordering Information Device Marking FDS8978 Device FDS8978 Package SO-8 Reel Size 330mm 2 G1 Q1 1 S1 Ratings 30 ±20 7.5 6.9 49 57 1.6 13 -55 to 150 Units V V A A A mJ W mW/oC oC 40 oC/W 78 oC/W 135 oC/W Tape Width 12mm Quantity 2500 units ©2011 Fairchild Semiconductor Corporation FDS8978 Rev.

Overview

FDS8978 Dual N-Channel PowerTrench® MOSFET FDS8978 N-Channel PowerTrench® MOSFET 30V, 7.

Key Features

  • rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A.
  • rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A.
  • High performance trench technology for extremely low rDS(on).
  • Low gate charge.
  • High power and current handling capability.
  • 100% Rg Tested.
  • RoHS Compliant D1 D1 D2 D2 General.

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