FDT86256
Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
- Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
- Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
- Very low Qg and Qgd compared to competing trench technologies August 2011
