FDT86256 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Fast switching speed 100% UIL Tested RoHS pliant Applications DC-DC conversion Inverter Synchronous Rectifier D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C...
FDT86256 Key Features
- Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
- Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
- Very low Qg and Qgd pared to peting trench technologies
- Fast switching speed
- 100% UIL Tested
- RoHS pliant