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FDU3580 - 80V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features.
  • 7.7 A, 80 V. RDS(ON) = 29 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 6 V.
  • Low gate charge (34nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability D D G S DT(O-TP(-TOD2AO5--KP2-2A5K2).

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Full PDF Text Transcription for FDU3580 (Reference)

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FDD3580/FDU3580 August 2001 FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the over...

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is N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 7.7 A, 80 V.