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FDU7N60NZTU - N-Channel MOSFET

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 1.05 Ω (Typ. ) @ VGS = 10 V, ID = 2.75 A.
  • Low Gate Charge (Typ. 13 nC).
  • Low Crss (Typ. 7 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD7N60NZ / FDU7N60NZTU — N-Channel UniFETTM II MOSFET November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress.