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FDU8586 - N-Channel PowerTrench MOSFET

Description

Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant Vcore DC-DC for Desktop Computers and

Features

  • General.

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www.DataSheet4U.com FDD8586/FDU8586 N-Channel PowerTrench® MOSFET January 2007 FDD8586/FDU8586 N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mΩ Features General Description „ Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
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