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FDU8586 - N-Channel PowerTrench MOSFET

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FDU8586 Product details

Description

Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conv

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