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FDU8880 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters tm

Key Features

  • rDS(ON) = 10mΩ, VGS = 10V, ID = 35A.
  • rDS(ON) = 13mΩ, VGS = 4.5V, ID = 35A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability D GDS I-PAK (TO-251AA) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS.

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Full PDF Text Transcription for FDU8880 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDU8880. For precise diagrams, and layout, please refer to the original PDF.

FDU8880 May 2008 FDU8880 N-Channel PowerTrench® MOSFET 30V, 58A, 10mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall effi...

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nnel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters tm Features • rDS(ON) = 10mΩ, VGS = 10V, ID = 35A • rDS(ON) = 13mΩ, VGS = 4.

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