Datasheet4U Logo Datasheet4U.com

FDZ1905PZ - P-Channel MOSFET

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Features

  • Max rS1S2(on) = 126mΩ at VGS =.
  • 4.5V, IS1S2 =.
  • 1A.
  • Max rS1S2(on) = 141mΩ at VGS =.
  • 2.5V, IS1S2 =.
  • 1A.
  • Max rS1S2(on) = 198mΩ at VGS =.
  • 1.8V, IS1S2 =.
  • 1A.
  • Max rS1S2(on) = 303mΩ at VGS =.
  • 1.5V, IS1S2 =.
  • 1A.
  • Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA.
  • Ultra-thin package: less than 0.65 mm height when mounted to PCB.
  • High power and current hand.

📥 Download Datasheet

Datasheet preview – FDZ1905PZ

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor
  • FDZ191P - P-Channel 1.5V PowerTrench WL-CSP MOSFET
  • FDZ192NZ - N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET
  • FDZ193P - P-Channel 1.7V PowerTrench WL-CSP MOSFET
  • FDZ197PZ - -20V P-Channel 1.5V Specified PowerTrench Thin WL-CSP MOSFET
  • FDZ1040L - Integrated Load Switch
  • FDZ1323NZ - MOSFET
  • FDZ1416NZ - MOSFET
  • FDZ201N - N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

Full PDF Text Transcription

Click to expand full text
FDZ1905PZ Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET www.DataSheet4U.com July 2008 FDZ1905PZ Common Drain P-Channel 1.5V –20V, –3A, 123mΩ Features „ Max rS1S2(on) = 126mΩ at VGS = –4.5V, IS1S2 = –1A „ Max rS1S2(on) = 141mΩ at VGS = –2.5V, IS1S2 = –1A „ Max rS1S2(on) = 198mΩ at VGS = –1.8V, IS1S2 = –1A „ Max rS1S2(on) = 303mΩ at VGS = –1.5V, IS1S2 = –1A „ Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.
Published: |