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FDZ192NZ Datasheet N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET January 2010 FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET 20 V, 5.

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General Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ192NZ minimizes both PCB space and rDS(on).

This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).

Applications „ Battery management „ Load switch „ Battery protection PIN1 S SG DS D BOTTOM TOP WL-CSP 1x1.5 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25°C Power Dissipation TA = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 5.3 15 1.9 0.9 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 65 133 °C/W Device Marking 8 Device FDZ192NZ Package WL-CSP 1x1.5 Thin Reel Size 7” Tape Width 8 mm Quantity 5000 units ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 1 www.fairchildsemi.com FDZ192NZ N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise

Key Features

  • Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 2.0 A.
  • Max rDS(on) = 43 mΩ at VGS = 2.5 V, ID = 2.0 A.
  • Max rDS(on) = 49 mΩ at VGS = 1.8 V, ID = 1.0 A.
  • Max rDS(on) = 55 mΩ at VGS = 1.5 V, ID = 1.0 A.
  • Occupies only 1.5 mm2 of PCB area. Less than 50% of the area of 2 x 2 BGA.
  • Ultra-thin package: less than 0.65 mm height when mounted to PCB.
  • HBM ESD protection level > 2200V (Note3).
  • RoHS Compliant General.

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