* Max Junction Temperature 175 oC
* Avalanche Rated 180 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
.

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits July 2016 Description SiC Schottky.

SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system .

FFSP05120A

FFSP0665A

FFSP08120A

FFSP0865A

FFSP10120A

FFSP1265A

FFSP15120A

FFSP20120A

FFSP2065A

FFSP2065B

FFSP2065BDN-F085

FFSPF0865A

FFSB0665A