FGA15N120ANTD Datasheet | Fairchild Semiconductor

Features - NPT Trench Technology, Positive temperature coefficient - Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C - Low switching loss: Eoff, typ = 0.6m J @ IC = 15A and TC = 25°C - Extremely enhanced avalanche capability tm Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current (Note 1) Description Collector-Emitter Voltage @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C 1200 ± 20 30 15 45 15 45 186 74 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJC RθJA Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 0.67 2.88 40 Units °C/W °C/W °C/W Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature ©2006 Fairchild Semiconductor Corporation .fairchildsemi. FGA15N120ANTD Rev. A FGA15N120ANTD 1200V NPT Trench IGBT Package Marking and Ordering Information Device...