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FGA40T65UQDF - IGBT

Datasheet Summary

Description

Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Features

  • Maximum Junction Temperature: TJ = 175oC.
  • Positive Temperature Co-efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ. ) @ IC = 40 A.
  • 100% of the Parts tested for ILM(1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • RoHS Compliant General.

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Datasheet preview – FGA40T65UQDF

Datasheet Details

Part number FGA40T65UQDF
Manufacturer Fairchild Semiconductor
File Size 752.51 KB
Description IGBT
Datasheet download datasheet FGA40T65UQDF Datasheet
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FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT FGA40T65UQDF 650 V, 40 A Field Stop Trench IGBT May 2016 Features • Maximum Junction Temperature: TJ = 175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ.) @ IC = 40 A • 100% of the Parts tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
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