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Fairchild Semiconductor Electronic Components Datasheet

FGB3040CS Datasheet

N-Channel Current Sensing Ignition IGBT

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FGB3040CS pdf
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May 2007
FGB3040CS
tm
EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
General Description
The FGB3040CS is an lgnition IGBT that offers outstand-
ing SCIS capability along with a ratiometric emitter current
sensing capability. This sensing is based on a emitter
active area ratio of 200:1. The output is provided through a
fourth (sense) lead. This signal provides a current level
that is proportional to the main collector to emitter current.
The effective ratio as measured on the sense lead is a
function of the sense output, the collector current and the
gate to emitter drive voltage.
AD FREE I
Applications
„ Smart Automotive lgnition Coil Driver Circuits
„ ECU Based Systems
„ Distributorless Based Systems
„ Coil on Plug Based Systems
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
IC25 Continuous Collector Current, at VGE = 4.0V, TC = 25°C
IC110
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
VGEM Maximum Continuous Gate to Emitter Voltage
PD
Power Dissipation, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
TPKG Max. Package Temp. for Soldering (Package Body for 10 sec)
ESD Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
@2007 Fairchild Semiconductor Corporation
FGB3040CS Rev. A
1
Ratings
430
24
300
170
21
19
±10
150
1
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FGB3040CS Datasheet

N-Channel Current Sensing Ignition IGBT

No Preview Available !

FGB3040CS pdf
Package Marking and Ordering Information
Device Marking
3040CS
3040CS
Device
FGB3040CS
FGB3040CS
Package
TO-263 6 Lead
TO-263 6 Lead
Reel Size
300mm
Tube
Tape Width
24mm
N/A
Quantity
800
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
IGEO
ICES
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 1KΩ, See Fig.
-40 to 150oC
17
ICE = 10mA, VGE = 0V
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 0, See Fig.
-40 to 150oC
17
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Gate to Emitter Leakage Current
VGE = ±10V
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 13
IECS
Emitter to Collector Leakage Current
VEC = 24V,
See Fig. 13
R1 Series Gate Resistance
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V
ICE(ON) Collector to Emitter On State Current VCE = 5V, VGE = 5V
Dynamic Characteristics
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
See Fig. 5
TC = 150oC
See Fig. 6
TC = 150oC
370 410 430 V
390 430 450 V
30 - - V
±12 ±14 -
V
- - ±9 μA
- - 25 μA
- - 1 mA
-
-
-
-
1
40
mA
- 100 -
Ω
- 1.3 1.6 V
- 1.6 1.85 V
- 1.8 2.35 V
- 37 -
A
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
βAREA Emitter Sense Area Ratio
β5Ω Emitter Current Sense Ratio
β20Ω
Emitter Current Sense Ratio
Switching Characteristics
ICE = 10A, VCE = 12V,
VGE = 5V, See Fig. 16
ICE = 1mA, VCE = VGE
See Fig. 12
ICE = 10A, VCE = 12V
Sense Area/Total Area
TC = 25oC
TC = 150oC
ICE = 8.0A, VGE = 5V, RSENSE = 5 Ω
ICE = 9.0A, VGE = 5V, RSENSE = 20 Ω
- 15 -
1.3 1.6 2.2
0.75 1.1 1.8
- 3.0 -
- 1/200 -
- 230 -
550 640 765
nC
V
V
-
-
-
td(ON)R
trR
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
Current Rise Time-Resistive
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 14
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500μHy,
tfL Current Fall Time-Inductive
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 14
SCIS Self Clamped inductive Switching
TJ = 25°C, L = 3.0mHy, ICE = 14.2A,
RG = 1k Ω, VGE = 5V, See Fig. 3&4
Thermal Characteristics
RθJC Thermal Resistance Junction to Case All Packages
- 0.6 4 μs
- 1.5 7 μs
- 4.7 15 μs
- 2.6 15 μs
- - 300 mJ
- - 1.0 oC/W
FGB3040CS Rev. A
2 www.fairchildsemi.com


Part Number FGB3040CS
Description N-Channel Current Sensing Ignition IGBT
Maker Fairchild Semiconductor
Total Page 9 Pages
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