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FGH30N120FTD Datasheet

Manufacturer: Fairchild (now onsemi)
FGH30N120FTD datasheet preview

FGH30N120FTD Details

Part number FGH30N120FTD
Datasheet FGH30N120FTD-FairchildSemiconductor.pdf
File Size 557.13 KB
Manufacturer Fairchild (now onsemi)
Description Trench IGBT
FGH30N120FTD page 2 FGH30N120FTD page 3

FGH30N120FTD Overview

Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. C COLLECTOR (FLANGE) Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current...

FGH30N120FTD Key Features

  • Field stop trench technology
  • High speed switching
  • Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A
  • High input impedance
  • RoHS pliant

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