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FJN13003 - NPN Silicon Transistor Planar Silicon Transistor

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FJN13003 FJN13003 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W 1 TO-92 1. Emitter 2. Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Power Dissipation(Ta=25°C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 1.5 1.
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