Datasheet Details
| Part number | FPT720 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 85.10 KB |
| Description | General-Purpose Silicon Photodiode |
| Datasheet |
 FPT720 Datasheet
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| Part number | FPT720 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 85.10 KB |
| Description | General-Purpose Silicon Photodiode |
| Datasheet |
FPT720 Datasheet
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The FPT720 is a low-cost, general.-purpose, silicon photodiode encapsulated in a clear plastic T1 package.
Absolute Maximum Ratings Maximum Temperature and Humidity Operating Temperature -40°C to +85°C Storage Temperature -55°C to +100°C Pin Temperature (Soldering, 5 s) 230°C Relative Humidity at 85°C 85% Maximum Power Dissipation = Total Dissipation at TA 25°C Derate Linearly from 25° C 100 mW 1.33 mW 1°C Maximum Voltage and Current VR Reverse Voltage 50 V 4-70 FPT720 ,f R Package Outline .150 (3.810) CATHODE ~ .120:.010 (3.048±0.254) .200 re;;::;:;:j 1(5.080) (4~ .550 MIN '~ .020 (.508) X .020(.508) f.040 MIN (1.016) N o t• • All dimensions in inches bold snd millimeters (parentheses) Tolerence unless specified - ±.015 (±.381) Blue Dot on package side differentiates PHOTODIODE from PHOTO EMITTER Typical Electrical Characteristic 4-71 FPT720 Electrical Characteristics TA = 25°C Symbol Characteristic BV Breakdown Voltage Voe Open-Circuit Voltage (Note) IR Dark Current IL Photo Current (Note) lL(sc) Short-Circuit Current (Note) R (Tungsten Responsivity (Note) R@900nm Responsivity 900 nm Co Open-Circuit Capacitance CR Reversed Bias Capacitance Rmax NEP Responsivity (Absolute) at Spectral Peak Noise Equivalent Power D Detectivity Min Typ Max 50 120 380 400 0.3 35 15 25 15 25 0.6 1.0 3.9 60 20 0.6 1.0 x 10- 14 8.8x 1012 Not.
Irradiation source is an unfilterad Tungsten Lamp operated at 2854°K color temperature Units Test Conditions V IR = 10/LA, H :S 0.1 /LW Icm2 mV No Bias, H = 20 mW/cm2 nA VR = -10 V, H :S 0.1 /LW Icm2 /LA VR = -10V, H = 20 mW/cm2 /LA No Bias, H = 20 mW/cm2 /LA I No Bias, mW/cm2 Te = 2854°K /LA I mW/cm2 No Bias, GaAs pF VR = 0 V, H:S 0.1 mW/cm2 pF VR=-10V, H :S 0.1 /LW Icm2 A/W VR = 0 V, A = 800 nm W VR = -10 V, A = 800 nm, At= 1.0Hz cmYHZ VR = -10 V, W A = 800 nm
Low-Cost, General-Purpose Silicon Photodiode Optoelectronics Group.
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