FQA10N80C Key Features
- 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast switching 100% aval
- Part: FQA10N80C
- Manufacturer: Fairchild (official site)
- Size: 802.88 KB
Other FQA10N80C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FQA10N80C-F109 | N-Channel QFET MOSFET |
FQA10N80C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...