FQA10N80C_F109 Datasheet (N-Channel QFET MOSFET)

Part: FQA10N80C_F109
Manufacturer: Fairchild (official site)
Size: 973.12 KB

FQA10N80C_F109 Key Features

10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A
Low Gate Charge (Typ. 44 nC)
Low Crss (Typ. 15 pF)
100% Avalanche Tested
RoHS pliant
Continuous (TC = 25oC) -Continuous (TC = 100oC)
Pulsed
Derate above 25oC
55 to +150 300
N-Channel QFET® MOSFET

Other FQA10N80C_F109 Datasheets

Manufacturer	Part Number	Description
onsemi	FQA10N80C-F109	N-Channel QFET MOSFET

FQA10N80C_F109 Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...