FQA12N60
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 12A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series ! S
