FQA32N20C Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQA32N20C — N-Channel QFET® MOSFET FQA32N20C N-Channel QFET® MOSFET 200 V, 32 A, 82 mΩ May.

Datasheet Details

Part number	FQA32N20C
Manufacturer	Fairchild (now onsemi)
File Size	2.67 MB
Description	N-Channel MOSFET
Datasheet	FQA32N20C-FairchildSemiconductor.pdf

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

32 A, 200 V, RDS(on) = 82 mΩ (Max. ) @ VGS = 10 V, ID = 16 A.
Low Gate Charge (Typ. 82.5 nC).
Low Crss (Typ. 185 pF).
100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalan.

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