FQA6N90C Key Features
- 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avala
- Part: FQA6N90C
- Manufacturer: Fairchild (official site)
- Size: 792.44 KB
Other FQA6N90C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FQA6N90C-F109 | N-Channel MOSFET |
FQA6N90C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...