FQA7N80C_F109
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
- Low Gate Charge (Typ. 27nC)
- Low Crss (Typ. 10pF)
- 100% Avalanche Tested
- RoHS compliant May 2014
