Datasheet4U Logo Datasheet4U.com

FQA7N80C_F109 - N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.5 A.
  • Low Gate Charge (Typ. 27nC).
  • Low Crss (Typ. 10pF).
  • 100% Avalanche Tested.
  • RoHS Compliant May 2014.

📥 Download Datasheet

Datasheet preview – FQA7N80C_F109

Datasheet Details

Part number FQA7N80C_F109
Manufacturer Fairchild Semiconductor
File Size 2.02 MB
Description N-Channel MOSFET
Datasheet download datasheet FQA7N80C_F109 Datasheet
Additional preview pages of the FQA7N80C_F109 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Features • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A • Low Gate Charge (Typ. 27nC) • Low Crss (Typ. 10pF) • 100% Avalanche Tested • RoHS Compliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G DS TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Published: |