FQB19N20C Datasheet (Fairchild Semiconductor)

FQB19N20C Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQB19N20C Features

* 19.0 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A

* Low Gate Charge (Typ. 40.5 nC)

* Low Crss (Typ. 85 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parame