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FQB19N20C - 200V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 19.0 A, 200 V, RDS(on) = 170 mΩ (Max. ) @ VGS = 10 V, ID = 9.5 A.
  • Low Gate Charge (Typ. 40.5 nC).
  • Low Crss (Typ. 85 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM VGSS EAS IAR EAR dv/dt Drain Current - Pulsed Gate-Source voltage Single Pulsed Avalanche.

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FQB19N20C — N-Channel QFET® MOSFET FQB19N20C N-Channel QFET® MOSFET 200 V, 19 A, 170 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 19.0 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 40.5 nC) • Low Crss (Typ.
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