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FQB3N60C Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

FQB3N60C 600V N-Channel MOSFET May 2006 QFET FQB3N60C 600V N-Channel.

Key Features

  • 3A, 600V, RDS(on) = 3.4Ω @ VGS = 10 V.
  • Low gate charge ( typical 10.5 nC).
  • Low Crss ( typical 5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability TM.