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FQB8N90C - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V.
  • Low Gate Charge (Typ. 35 nC).
  • Low Crss (Typ. 12 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQB8N90C — N-Channel QFET® MOSFET FQB8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. December 2013 Features • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V • Low Gate Charge (Typ. 35 nC) • Low Crss (Typ. 12 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability D D G S D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.