FQB90N08 - 80V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FQB90N08
Manufacturer	Fairchild (now onsemi)
File Size	674.89 KB
Description	80V N-Channel MOSFET
Datasheet	FQB90N08 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.

These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

Overview

FQB90N08 / FQI90N08 January 2001 QFET FQB90N08 / FQI90N08 80V N-Channel.

Key Features

71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

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