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* 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical 16 pF) Fast switching 100% ava.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB9N08

FQB9N15

FQB9N25

FQB9N30

FQB9N50

FQB9N50C

FQB9N50CF

FQB90N08

FQB95N03L

FQB9P25

FQB020ADC-007-M

FQB020ADC-007-S

FQB020ADC-N07-M