FQB9N50C Key Features
- 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 24 pF)
- 100% Avalanche Tested
- Part: FQB9N50C
- Manufacturer: Fairchild (official site)
- Size: 498.07 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQB9N50CF | N-Channel MOSFET |
| FQB9N50 | 500V N-Channel MOSFET |
| FQB9N08 | 80V N-Channel MOSFET |
| FQB9N08L | 80V LOGIC N-Channel MOSFET |
| FQB9N15 | 150V N-Channel MOSFET |
FQB9N50C Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...