FQB9N50C
Features
- 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 28 n C)
- Low Crss (Typ. 24 p F)
- 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D2-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS
IDM VGSS EAS IAR EAR dv/dt
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation...
