FQD12P10TM_F085 Key Features
- 9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V
- Low gate charge ( typical 21 nC)
- Low Crss ( typical 65 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS pliant
- Part: FQD12P10TM_F085
- Manufacturer: Fairchild (official site)
- Size: 861.43 KB
Other FQD12P10TM_F085 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FQD12P10TM-F085 | P-Channel MOSFET |
FQD12P10TM_F085 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio amplifier,...