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FQD12P10TM_F085 - 100V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V.
  • Low gate charge ( typical 21 nC).
  • Low Crss ( typical 65 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Qualified to AEC Q101.
  • RoHS Compliant tm DD G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Contin.

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FQD12P10TM_F085 P-Channel MOSFET February 2010 FQD12P10TM_F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • -9.4A, -100V, RDS(on) = 0.
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