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FQD16N25C - MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 16 A, 250 V, RDS(on) = 270 mΩ (Max. ) @ VGS = 10 V, ID = 8 A.
  • Low Gate Charge (Typ. 41 nC).
  • Low Crss (Typ. 68 pF).
  • 100% Avalanche Tested November 2013.

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Full PDF Text Transcription

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FQD16N25C — N-Channel QFET® MOSFET FQD16N25C N-Channel QFET® MOSFET 250 V, 16 A, 270 mΩ Features • 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 8 A • Low Gate Charge (Typ. 41 nC) • Low Crss (Typ. 68 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. G S D D-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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