FQD19N10 datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 1.18MB)

Features and benefits

* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 7.8 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 32 pF)
* 100% Avalanche Tested D G S .

Application

Features
* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 7.8 A
* Low Gate Charge (Typ. 19 nC)
.

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

Image gallery