FQD19N10 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FQD19N10 Features

* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 7.8 A

* Low Gate Charge (Typ. 19 nC)

* Low Crss (Typ. 32 pF)

* 100% Avalanche Tested D G S D D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

FQD19N10 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD19N10 Datasheet (1.18 MB)

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Datasheet Details

Part number:

FQD19N10

Manufacturer:

Fairchild Semiconductor

File Size:

1.18 MB

Description:

N-channel mosfet.

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FQD19N10 N-Channel MOSFET Fairchild Semiconductor

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FQD19N10 Features

FQD19N10 General Description

Datasheet Details

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Description:

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