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FQD1N50B Datasheet, Fairchild Semiconductor

FQD1N50B Datasheet, Fairchild Semiconductor

FQD1N50B

datasheet Download (Size : 606.69KB)

FQD1N50B Datasheet

FQD1N50B mosfet

500v n-channel mosfet.

FQD1N50B

datasheet Download (Size : 606.69KB)

FQD1N50B Datasheet

FQD1N50B Features and benefits


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* 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche test.

FQD1N50B Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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FQD1N50B Page 1 FQD1N50B Page 2 FQD1N50B Page 3

TAGS

FQD1N50B
500V
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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