Datasheet Details
| Part number | FQD2N100 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 0.97 MB |
| Description | 1000V N-Channel MOSFET |
| Datasheet |
 FQD2N100 Datasheet
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General Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 1.6 A, 1000 V, RDS(on) = 9 Ω (Max. )@ VGS = 10 V, ID = 0.8 A.
- Low Gate Charge ( Typ. 12 nC).
- Low Crss ( Typ. 5 pF).
- 100% Avalanche Tested.
- RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Vo.