FQD2N100 Datasheet - Fairchild Semiconductor

1000V N-Channel MOSFET

FQD2N100 Features

* 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A

* Low Gate Charge ( Typ. 12 nC)

* Low Crss ( Typ. 5 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol

FQD2N100 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD2N100 Datasheet (0.97 MB)

FQD2N100 Datasheet Preview — Preview of FQD2N100 PDF

Datasheet Details

Part number:

FQD2N100

Manufacturer:

Fairchild Semiconductor

File Size:

0.97 MB

Description:

1000v n-channel mosfet.

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FQD2N100 1000V N-Channel MOSFET Fairchild Semiconductor

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FQD2N100 Features

FQD2N100 General Description

Datasheet Details

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Description:

FQD2N100 Distributor