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FQD5N15 - 150V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max. ) @ VGS = 10 V, ID = 2.15 A.
  • Low Gate Charge (Typ. 5.4 nC).
  • Low Crss (Typ. 7.5 pF).
  • 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted.  , 6 6 , ; 6 ; !$ 9         ,             2. 7.
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Datasheet Details

Part number FQD5N15
Manufacturer Fairchild Semiconductor
File Size 911.53 KB
Description 150V N-Channel MOSFET
Datasheet download datasheet FQD5N15 Datasheet
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FQD5N15 — N-Channel QFET® MOSFET FQD5N15 N-Channel QFET® MOSFET 150 V, 4.3 A, 800 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A • Low Gate Charge (Typ. 5.4 nC) • Low Crss (Typ. 7.5 pF) • 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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