FQD5N20L - 200V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD5N20L
Manufacturer	Fairchild ↗ Semiconductor
File Size	758.11 KB
Description	200V N-Channel MOSFET
Datasheet	FQD5N20L_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

3.8 A, 200 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 1.9 A.
Low Gate Charge (Typ. 4.8 nC).
Low Crss (Typ. 6.0 pF).
100% Avalanche Tested.
RoHS Compliant D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Puls.

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Published: Apr 1, 2005 |