FQD6N50C Datasheet - Fairchild Semiconductor

N-Channel enhancement mode power field effect transistors

FQD6N50C Features

* 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V Low gate charge (typical 19nC) Low Crss (typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK FQD Series I-PAK G D S FQU Series G!

FQD6N50C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD6N50C Datasheet (687.07 KB)

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Datasheet Details

Part number:

FQD6N50C

Manufacturer:

Fairchild Semiconductor

File Size:

687.07 KB

Description:

N-channel enhancement mode power field effect transistors.

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FQD6N50C N-Channel enhancement mode power field effect transistors Fairchild Semiconductor

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FQD6N50C Features

FQD6N50C General Description

Datasheet Details

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