FQD7N10 datasheet, mosfet equivalent, Fairchild Semiconductor

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FQD7N10 Features and benefits

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* 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche test.

FQD7N10 Application

such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. TM Features
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FQD7N10 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

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