FQD7N10 - 100V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FQD7N10
Manufacturer	Fairchild (now onsemi)
File Size	544.88 KB
Description	100V N-Channel MOSFET
Datasheet	FQD7N10 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.

These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

Overview

FQD7N10 / FQU7N10 December 2000 QFET FQD7N10 / FQU7N10 100V N-Channel.

Key Features

5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

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