*
*
*
*
*
* 6.2A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQD8P10

FQD8P10TM-F085

FQD8P10TM_F085

FQD10N20

FQD10N20C

FQD10N20L

FQD11P06

FQD12N06

FQD12N20

FQD12N20L

FQD12N20LTM_F085

FQD12P10

FQD12P10TM-F085