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Fairchild Semiconductor Electronic Components Datasheet

FQD8P10TM_F085 Datasheet

100V P-Channel MOSFET

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December 2010
FQD8P10TM_F085
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -6.6A, -100V, RDS(on) = 0.53@VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Qualified to AEC Q101
• RoHS Compliant
D
D
D-PAK
GS
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD8P10TM_F085 Rev. C1
1
G
S
Ratings
-100
-6.6
-4.2
-26.4
± 30
150
-6.6
4.4
-6.0
2.5
44
0.35
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Typ Max Units
-- 2.84 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQD8P10TM_F085 Datasheet

100V P-Channel MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-100
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
VGS = -10 V, ID = -3.3 A
-- 0.41 0.53
VDS = -40 V, ID = -3.3 A (Note 4)
--
4.1
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 360 470 pF
-- 120 155 pF
-- 30 40 pF
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
tf
Qg
Qgs
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -50 V, ID = -8.0 A,
RG = 25
(Note 4, 5)
VDS = -80 V, ID = -8.0 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
11 30
110 230
20 50
35 80
12 15
3.0 --
6.4 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -6.6 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- -26.4 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -6.6 A
-- -- -4.0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -8.0 A,
-- 98
dIF / dt = 100 A/µs
(Note 4) -- 0.35
--
--
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = -6.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -8.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
FQD8P10TM_F085 Rev. C1
2
www.fairchildsemi.com


Part Number FQD8P10TM_F085
Description 100V P-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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