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FQE10N20C - 200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V.
  • Low gate charge ( typical 20 nC).
  • Low Crss ( typical 40.5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability GD S TO-126 FQE Series G! D !.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C).

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FQE10N20C FQE10N20C 200V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. Features • 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V • Low gate charge ( typical 20 nC) • Low Crss ( typical 40.