FQE10N20C Datasheet - Fairchild Semiconductor

200V N-Channel MOSFET

FQE10N20C Features

* 4.0A, 200V, RDS(on) = 0.36Ω @VGS = 10 V

* Low gate charge ( typical 20 nC)

* Low Crss ( typical 40.5 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability GD S TO-126 FQE Series G! D !

* ◀▲

* ! S Absolute Maximum

FQE10N20C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQE10N20C Datasheet (625.02 KB)

FQE10N20C Datasheet Preview — Preview of FQE10N20C PDF

Datasheet Details

Part number:

FQE10N20C

Manufacturer:

Fairchild Semiconductor

File Size:

625.02 KB

Description:

200v n-channel mosfet.

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FQE10N20C 200V N-Channel MOSFET Fairchild Semiconductor

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FQE10N20C Features

FQE10N20C General Description

Datasheet Details

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Description:

FQE10N20C Distributor