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FQH44N10 - MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 48 A, 100 V, RDS(on) = 39 m (Max. ) @ VGS = 10 V, ID = 24 A.
  • Low Gate Charge (Typ. 48 nC).
  • Low Crss (Typ. 85 pF).
  • 100% Avalanche Tested.
  • 175C Maximum Junction Temperature Rating D G D S TO-247 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100.

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Full PDF Text Transcription

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FQH44N10 — N-Channel QFET® MOSFET FQH44N10 N-Channel QFET® MOSFET 100 V, 48 A, 39 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V, ID = 24 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ.
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