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FQH90N10V2 - MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V.
  • Low gate charge ( typical 147 nC).
  • Low Crss ( typical 300 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating October 2005 QFET ®.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQH90N10V2 100V N-Channel MOSFET FQH90N10V2 100V N-Channel MOSFET Features • 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V • Low gate charge ( typical 147 nC) • Low Crss ( typical 300 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating October 2005 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
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