FQH90N10V2 mosfet equivalent, mosfet.
* 105A, 100V, RDS(on) = 10mΩ @VGS = 10 V
* Low gate charge ( typical 147 nC)
* Low Crss ( typical 300 pF)
* Fast switching
* 100% avalanche tested
lowest Rds(on) is required.
D
GD S
TO-247
FQH Series
Absolute Maximum Ratings
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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